题目：High performance compound semiconductor devices
摘要：
Innovating electronic materials and related process technologies are critical in achieving advanced devices with high performances and new systems with complex functions. III-V compound semiconductors are attractive due to their small effective masses and high electron mobility. My research has been focused on design and fabrication of electron devices with III-V compound semiconductors. In this talk, I will talk about our recently demonstrated GaN high electron mobility transistors as well as InAs fin field effect transistors. Our newly developed superacid treatment technique on InAs fin field effect transistors will be discussed. In addition, TiO2 thin film transistors with high performanceswill also be elaborated.
时间：2019年6月17日上午10:00
主讲人：Dr. Yuping Zeng
地点：物理与通信电子学院学术报告厅（实验大楼 中-208）
主讲人简介：
Dr. Yuping Zeng is currently an assistant professor at University of Delaware. She worked as a postdoctor under Prof. ChenmingHu and Ali Javeyin University of California at Berkeley. She has been working on various projects on III-V compound semiconductor electron devices, such as InAs Tunneling Field Effect Transistors (TFETs), Metal Oxide Semiconductor Field Effect Transistors (MOSFETs), Fin Field Effect Transistors (FinFETs). She received her PhD degree in Swiss Federal Institute of Technology in 2011. During her PhD study, she worked on optimizations of design and fabrication process of high speed InP/GaAsSb double heterojunction bipolar transistors (DHBTs) under Prof. Colombo Bolognesi. She obtained her Master degree in National University of Singapore where her main research was on nanoscale material process and characterizations. She is one of the 20 gift-young students who were selected to Jilin University at the age of 15 in 1994 for a gift-young university program in China and obtained her Bachelor’s degree when she was less than 19. Several facets of her research activity are reflected in 36 journal papers and 19 international conference papers. Dr. Zeng is a recipient of the 2009 Chinese Government Award for Outstanding Self-financed Students Abroad. Her research interests are continued on advanced devices and systems for low power applications and high performance applications by innovations in device design, material design and fabrication technology.